Infineon’s GaN chip breakthrough poised to disrupt the market

Infineon aims for major share in GaN chip market after breakthrough

Infineon announces a breakthrough in gallium nitride (GaN) chip production, aiming to capture a major share of the market by reducing costs and increasing efficiency, potentially reshaping the semiconductor landscape.

Infineon aims for major share in GaN chip market after breakthrough

German semiconductor company Infineon plans to capture a significant share of the gallium nitride (GaN) chip market following a technological breakthrough that reduces production costs. GaN chips, known for their efficiency, speed, and ability to perform under high temperatures and voltages, are increasingly used in chargers for devices like laptops, smartphones, and electric vehicles.

 

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Infineon CEO Jochen Hanebeck stated that the market for GaN technology could reach several billion dollars by the end of the decade, with GaN chip prices expected to align more closely with traditional silicon chips soon.

The breakthrough involves producing GaN chips on 300mm wafers, allowing 2.3 times more chips per wafer than the current 200mm standard, significantly cutting production costs. This advancement could lower prices, increase adoption, and potentially reshape the semiconductor market.

 

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